GOST 16153-80

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  ГОСТ 16153-80

GOST 16153−80 Germanium single crystal. Specifications (with Amendments No. 1, 2, 3, 4)

GOST 16153−80

Group W51

INTERSTATE STANDARD

GERMANIUM MONOCRYSTALLINE

Specifications

Monocrystalline germanium. Specifications

GST 17 7441

Date of introduction 1981−01−01

INFORMATION DATA

1. DEVELOPED AND INTRODUCED by the Ministry of nonferrous metallurgy of the USSR

2. APPROVED AND put INTO EFFECT by Decision of the USSR State Committee for standards from 14.03.80 N 1167

3. REPLACE GOST 16153−70

4. REFERENCE NORMATIVE AND TECHNICAL DOCUMENTS

5. Limitation of actions taken by Protocol No. 3−93 Interstate Council for standardization, Metrology and certification (ICS 5−6-93)

6. EDITION with Amendments No. 1, 2, 3, 4, approved in December 1984, may 1988, July 1990-February 1993 (IUS 4−85, 8−88, 10−90, 9−93)

This standard applies to monocrystalline ingot of germanium used for the production of semiconductor devices and specifies requirements for single-crystal Germany, izgotovleniu for the needs of the national economy.

1. TECHNICAL REQUIREMENTS

1.1. Germany monocrystalline ingot manufactured in accordance with the requirements of this standard e-type conductivity, doped with antimony, and p type conductivity, doped with gallium, for technological documentation approved in the established order.

1.2. Crystallographic orientation of single crystal ingot (III).

1.3. Maximum deviation of the plane face of the slice of monocrystalline ingot of germanium from the plane orientation (III) must not be more than 2°.

(Changed edition, Rev. N 1).

1.4. Single crystal ingot in Germany with the permissible relative deviation of the values of the electrical resistivity of the ends of the nominal value must correspond to the subgroups specified in table.1.

Table 1

The choice of the nominal values of the electrical resistivity of monocrystalline ingot is carried out in accordance with GOST 8032 in the following lines:

for resistivity from 0.1 to 1 Ω·cm — 0,1; 0,12; 0,15; 0,2; 0,25; 0,31; 0,4; 0,5; 0,63; 0,8; 1 Ohm·cm;

for electrical resistivity 1 to 10 Ω·cm — 1,1; 1,40; 1,8; 2,2; 2,8; 3,5; 4,5; 5,6; 7,1; 9 Ohm·cm;

for the electrical resistivity from 10 to 45 Ohm·cm — 11,2; 14; 18; 22,4; 28; 35,5; 45 Ohm·cm.

(Changed edition, Rev. N 1).

1.5. The dislocation density and the geometrical dimensions of monocrystalline ingots Germany must comply with the requirements of table.2.

Table 2

At the request of consumer single-crystal ingots of germanium GE 9 G1 is manufactured in diameter from 40 to 50 mm.

Monocrystalline ingots Germany 1 subgroups at density of dislocations and a dislocation density of 1·10-2·10cmsubgroup 2 density of dislocations produced the 01.01.91.

(Changed edition, Rev. N 1, 2).

1.6. The difference between the largest and smallest diameters of each single crystal ingot should not be more than 4 mm.

1.7. In the single-crystal ingots Germany subgroups 2 and 3 must be the total length of the small angle boundaries longer than the average diameter of single crystal ingots.

1.8. The mobility of main charge carriers in monocrystalline ingots Germany depending on the resistivity and type of conductivity must conform to the standards specified in table.3.

Table 3

(Changed edition, Rev. N 2).

1.9. Monocrystalline ingot of germanium should not have external defects: chips larger than 3 mm, cracks and cavities, and internal cavities and cracks detected when cutting the monocrystalline ingot.

1.10. Monocrystalline Germany, the crystallographic orientation of the longitudinal axis of the single crystal ingot, the maximum deviation of the plane of the cut single crystal ingot from the plane orientation (III), the mobility of main charge carriers, the density of dislocations for subgroup 1 and the absence of internal cavities and cracks provided by the manufacturing technology.

(Changed edition, Rev. N 2).

1.11. OKP codes are given in Annex 7.

(Added, Rev. N 1).

1.12. Single crystal ingots of germanium doped with gallium, crystallographic orientation (100) manufactured with a diameter of not less than 20 mm, with a nominal value of resistivity of 0.4 and 0.45 Ω·cm, with a permissible relative deviation of the values of electrical resistivity ±10%, density of dislocations not more than 10 cm, the density of defects redislocation of origin not more than 10 cm, a length of the monocrystalline ingot 50−120 mm.

The norm of defect density redislocation origin and the upper length of the monocrystalline ingot to 01.01.92 rejection are not.

(Added, Rev. N 3).

Examples of callouts

Monocrystalline ingot of germanium electronic type of conductivity, with a nominal value of specific electric resistance 14, subgroups b and 3:

GE 14б3 GOST 16153−80

The same hole type of conductivity, with a nominal value of electrical resistivity 45, sub-groups and 1:

GD 451 GOST 16153−80

2. ACCEPTANCE RULES

2.1. Monocrystalline germanium accept parties. The party must consist of one single crystal ingot. Acceptance tests subjected to single crystal ingot, specifying: the type of conductivity; the value of resistivity; density of dislocations; and the total length of small angle boundaries for subgroups 2,3; geometrical dimensions and the absence of external defects; for Germany with crystallographic orientation (100) is the density of defects redislocation origin.

The definition of defect density redislocation of origin carried out for statistical purposes.

Periodic testing of guaranteed parameters (according to claim 1.10) is subjected to one single-crystal ingot, at least once a quarter.

(Changed edition, Rev. N 2).

2.2. Each monocrystalline ingot of germanium is accompanied by a quality document that should contain:

is the trademark or name and trademark of manufacturer;

— name of the product and its brand;

number of monocrystalline ingot;

— type of electrical conductivity;

— the electrical resistivity and its deviation from a selected nominal value;

the average value of the dislocation density on the upper and lower ends of the single crystal ingot to subgroup 2 and the bottom end of single crystal ingot for subgroup 3;

— the length and the diameter of the monocrystalline ingot in millimeters;

— net weight in grams;

— date of manufacture;

stamp of technical control;

— the designation of this standard;

— the stamp authority of public acceptance (for enterprises, which introduced gospriemka).

(Changed edition, Rev. N 1, 2).

3. CONTROL METHODS

3.1. Check Germany to monocrystalline carried out visually without the use of magnifying devices and without additional processing of monocrystalline ingots.

(Changed edition, Rev. N 1).

3.2. Type of conductivity Germany are determined on each of the ends of the monocrystalline ingot according to the method specified in Annex 1.

3.3. The crystallographic orientation of monocrystalline ingots and the deviation of the plane face of the slice plane orientation (III) is determined by the techniques given in annexes 2 and 3.

In case of disagreement in the assessment of the quality determination is carried out by x-ray methods (Annex 2).

3.4. Electrical resistivity single crystal ingot is measured according to GOST 24392 at both ends at points located one in Central and four in the peripheral region faces in accordance with the drawing. The location of the probes is perpendicular to the radius of the ingot.

The relative deviation of the values of the electrical resistivity of the ends of the nominal value of resistivity is calculated by the formula

,

where is the relative deviation of the values of the electrical resistivity of the nominal value;

,  — the maximum and minimum values of electrical resistivity from the results of measurements at five points;

the nominal resistivity.

(Changed edition, Rev. N 2).

3.5. The density of dislocations in the plane (III) and total length of low-angle boundaries define the bottom end of single crystal ingot of germanium by the method given in Annex 5.

For subgroup 2 the value of the average dislocation density determines the upper and lower ends of the monocrystalline ingot.

(Changed edition, Rev. N 1, 4).

3.6. Diameter is measured at both ends and in the middle of the single-crystal ingot with an error of not more than 0.5 mm, and a length with an error not exceeding 1 mm measuring tools to ensure the specified accuracy of the measurement.

3.6.1. Diameter for non-circular in cross-section monocrystalline ingots take the arithmetic mean of measurements of the minimum and maximum dimensions, passing through the center of the cross section of the single crystal ingot perpendicularly to the axis of growth.

3.7. Bulk single-crystal ingot is determined by weighing on a balance with an accuracy of at least ±1 g.

3.8. The mobility of main charge carriers are determined on two samples cut from the lower and upper ends of the single crystal ingot, according to methodology described in Annex 6.

3.8. The density of dislocations in the plane (100) monocrystalline ingots Germany is determined by the method given in Appendix 8.

(Added, Rev. N 4).

3.9. Inspection of single crystal ingots on absence of visual defects is carried out without the use of magnifying devices, without applying extra processing monocrystalline ingots.

4. PACKING, MARKING, TRANSPORTATION AND STORAGE

4.1. Each monocrystalline ingot of germanium is placed in the package of polyethylene film brand With GOST 10354. In the package with the single-crystal ingot to invest a quality document.

4.2. Plastic bag sealed or sealed with tape with adhesive layer according to GOST 20477 or similar and Packed in a cardboard or plastic box with soft padding. The connection of the cover with the box glued plastic band with an adhesive layer according to GOST 20477 or similar, or cover with a bandage box specified by the tape overlap.

(Changed edition, Rev. N 1).

4.3. On the box label showing:

— trademark or name and trademark of manufacturer;

— product names;

— document number on quality;

— weight in grams;

— the date of manufacture.

the designation of the present standard.

4.4. Cardboard or plastic boxes are Packed in wooden wooden boxes type III-1 according to GOST 2991 or boxes made of panels of type III according to GOST 5959 and seal the strip of flexible foam, aligning according to GOST 12923 or corrugated cardboard according to GOST 7376.

The mass of the packing space should not exceed 50 kg.

Each box must be attached to packing list stating:

— trademark or name and trademark of manufacturer;

— product names;

— net weight in kilograms;

— the number of monocrystalline ingots in the box;

— date of packing;

— the names and numbers of packer.

4.3, 4.4. (Changed edition, Rev. N 1, 2).

4.5. Labeling boxes according to GOST 14192 with the application of manipulation signs:

«Fragile, be careful»;

«Protect from moisture».

4.6. Monocrystalline germanium transporterowych by rail in covered wagons small shipments in accordance with shipping rules applicable on the transportation of the species.

When transporting two or more units of product packaging spend packaging of goods on flat universal pallets according to GOST 9078 by using a steel tape according to GOST 3560 or wire according to GOST 3282 diameter not less than 5 mm.

Overall dimensions and weight of package must not exceed the limits established by GOST 24597.

Allowed the transport of monocrystalline Germany by road and air transport in accordance with shipping rules applicable on the transportation of the species.

Allowed the transport of individual postal parcels. The gross mass of the box packages must not exceed 10 kg.

(Changed edition, Rev. N 1).

4.7. Monocrystalline ingots Germany should be stored in the manufacturer’s packaging in covered warehouses.

5. MANUFACTURER’S WARRANTY

5.1. The manufacturer guarantees the conformity of monocrystalline ingots Germany the requirements of this standard under the conditions of their storage.

5.2. The period of discontinuation is set 1 year from the date of shipment.

(Changed edition, Rev. N 2).

ANNEX 1 (mandatory). DETERMINATION OF TYPE OF CONDUCTIVITY

ANNEX 1
Mandatory

Type of electrical conductivity is determined by the generator and the end surface of the single crystal ingot by the method of using a thermal probe (thermoelectric power) or the method of point-contact rectification.

A method of using a thermal probe (cold or hot) recommended for and -like Germany, the resistivity of which at room temperature is less than 40 Ω·cm.

Type conductivity germanium with electrical resistivity above 40 Ohm·cm is determined by the cold probe.

The method of point-contact rectification is recommended for samples  — and -type germanium with resistivity greater than 1 Ohm·see

The primary method for determining the type of electrical conductivity method to determine the sign of the Hall coefficient (see Annex 6).

Compared to the basic method recommended have greater locality and can be used to identify areas with different types of electrical conductivity within one monocrystalline ingot. For materials with electrical conductivity close to that of your own, we recommend the use of the primary method of determining the type of conductivity in sign of the Hall coefficient.

1. The definition of the type of conductivity of a method of using a thermal probe

1.1. The essence of the method

The method consists in determining the polarity of the thermoelectric power that occurs between the heated and cooler areas of the semiconductor using a sensitive null indicator.

1 — probe; 2 — sample; 3 — zero indicator; 4 — metal plate

Damn.1

The temperature gradient created by local heating (cooling) of monocrystalline ingot as a result of the pressure of the heated (cooled) probe.

1.2. Equipment

Schematic diagram to determine the type of conductivity by means of hot () and cold probe (b) is shown in hell.1.

A probe made from any conductive material; use materials not subject to corrosion when heated or in a humid environment (such as Nickel). The second contact is a metal plate made of copper, lead or aluminum.

Indicator — a galvanometer with a sensitivity of at least 4·10A/div, for example of the M-195/2, or M-195/3. Allowed to use other display devices with sensitivity not lower.

Coolant — liquid nitrogen according to GOST 9293 or carbon dioxide, solid technical GOST 12162.

The probe is heated by any heating device; the temperature of the hot probe is controlled by the melting of wood’s alloy (melting point of 60.5 °C).

(Changed edition, Rev. N 2).

1.3. Preparation for measurement

In the presence on the surface of the monocrystalline ingot are visible to the naked eye traces of oxidation, Pavilosta from the surface of the monocrystalline ingot and remove the oxide film (etching, grinding, etc.); single-crystal ingots are washed in deionized water and dried with filter paper. Measurements are allowed on the surface obtained through cutting with a diamond tool or abrasive treatment.

1.4. Measurements

1.4.1. Pressing the heated (cooled) probe to the surface of the monocrystalline ingot that is included in the measuring circuit in the manner shown on the devil.1, to achieve the deflection of the null indicator.

1.4.2. Type of electric conductivity is determined in accordance with designations of the devil.1 when the deflection of the null indicator is greater 30% of the full scale of the instrument. To fulfil this requirement may increase the temperature difference between the probe and the single-crystal ingot.

2. The type definition of conductivity by the method of point-contact rectification

2.1. The essence of the method

The rectifying properties of the contact metal-semiconductor is determined by the type of main charge carriers in the semiconductor. The method is based on a qualitative comparison of the resistance of a point contact under different polarities of applied voltage. Type of electrical conductivity is determined by the deflection current-sensitive null indicator or by referring to the current-voltage curve obtained on the oscilloscope screen.

1 — point contact (probe); 2 — single crystal ingot; 3 — ohmic contact; 4 — autotransformer;
5 — zero indicator; 6 — branch to the horizontal plates of the oscilloscope; 7 — tap vertical
the plates of the oscilloscope; 8 — adjusting resistance

Damn.2

2.2. Equipment

Schematic diagram to determine the type of electrical conductivity by the method of point-contact rectification with the use of the zero-indicator () and oscilloscope (b) given on features.2.

-type

-type

Damn.3

Depending on the electrical resistivity of the sample and the sensitivity of the oscilloscope resistance value () may be different, but should provide a full sweep of the oscilloscope on the vertical axis.

The probe is made of tungsten or steel wire. The second contact is a metal plate made of copper, lead or aluminum. Ohmic contact is obtained by coating the surface of the sample in contact alloy. For example, using lumogallion pencil or indium-gallium paste.

Display device — a galvanometer with a sensitivity of 4·10A/div, for example of the M-196/2, or M-195/3; oscilloscopes, suitable for observation of volt-ampere characteristics, like S1−5, S1−19, S1−48 or similar.

2.3. Preparation for measurement

In the presence on the surface of the monocrystalline ingot are visible to the naked eye traces of oxidation, Pavilosta from the surface of the monocrystalline ingot and remove the oxide film (etching, grinding, etc.); single-crystal ingots are washed in deionized water and dried with filter paper. Measurements are allowed on the surface obtained through cutting with a diamond tool or abrasive treatment.

2.4. Measurements

2.4.1. The measurements of the single crystal ingot includes measuring circuit in the manner shown on the devil.2.

2.4.2. Clamp the probe to the surface of the single crystal ingot to achieve the deflection of the null indicator or appears on the screen of the oscilloscope voltage-current characteristics as shown on the devil.3, indicating the presence in the circuit of the rectifying contact.

The deflection of the null indicator must be greater than 30% of the full scale of the instrument.

Type of electric conductivity is adjusted in accordance with the devil.2 and 3.

The method does not introduce quantitative characteristics. The characteristic bend of the curves (see the devil.3) must not be considered from the quantitative point of view.

2.4.3. When using the method of point-contact rectification with the use of the oscilloscope can’t determine the type of electrical conductivity on the characteristics of rectification, if the characteristic is not bent or curved twice.

Similar effects occur due to the presence of transitions in the material.

3. Qualifications of the operator

3.1. Operator qualification shall meet the requirements of measuring electrical parameters of semiconductor materials of the third or higher rank in accordance with the applicable tariff and qualification categories.

4. Requirements for safety

4.1. The device and maintenance of electrical equipment used must meet the requirements of «Rules of technical operation of electrical consumers* and safety regulations at operation of electroinstallations of consumers*" approved by Gaselectronica.
_______________
* On the territory of the Russian Federation there are «Rules of technical operation of electrical installations», approved by order of Ministry of energy of Russia from 13.01.2003 No. 6, here and hereafter;
** In the territory of the Russian Federation act «Interbranch Rules on labor protection (safety rules) for electrical installations» (SWEAT P M-016−2001, RD 153−34.0−03.150−00), here and hereafter. — Note the manufacturer’s database.

Under the terms of electrical safety of electrical installations, used for measuring type of conductivity apply to electrical voltage up to 1000 V.