Indium Ин0000
Designation
| Name | The value |
|---|---|
| Designation GOST Cyrillic | Ин0000 |
| Designation GOST Latin | Ih0000 |
| Transliteration | In0000 |
| The chemical elements | In0000 |
Description
Indium Ин0000 usedin microelectronics like acceptor impurity to Germany and silicon; in the manufacture of glass for LCD screens; in the production of components of low-melting solders; to cover the mirrors (in particular car headlights. Thus the reflectivity of the mirrors is not worse than the silver, and the resistance of the atmosphere is higher); for the production of solar cells; coating the skirts of aluminum pistons for diesel engines to reduce wear.
Indium arsenide is used as a high temperature thermoelectric material with very high efficiency. To increase the efficiency usually legerrette 10% of indium phosphide.
Note
High purity indium. Indium has a high adhesion to many materials, allowing you to solder for example, metal with glass.
Standards
| Name | Code | Standards |
|---|---|---|
| Non-ferrous metals, including rare metals, and their alloys | В51 | GOST 10297-94 |
Chemical composition
| Standard | S | Mn | Ni | Fe | Cu | As | Al | Zn | Sn | Pb | Bi | Se | Mg | Ag | Cd | Te | In | Ga | Tl | Hg |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GOST 10297-94 | ≤5.0E-5 | ≤1.0E-6 | ≤1.0E-5 | ≤2.0E-5 | ≤5.0E-6 | ≤5.0E-5 | ≤1.0E-5 | ≤2.0E-5 | ≤3.0E-5 | ≤2.0E-5 | ≤3.0E-6 | ≤5.0E-5 | ≤3.0E-5 | ≤1.0E-6 | ≤3.0E-6 | ≤1.0E-5 | ≥99.9999 | ≤5.0E-5 | ≤8.0E-5 | ≤2.0E-5 |
In is the basis.
According to GOST 10297-94, the total content of normalized impurities is ≤ 1 · 10 -4 %.
According to GOST 10297-94, the total content of normalized impurities is ≤ 1 · 10 -4 %.
